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Retroperitoneal necrotizing fasciitis together with the involvement with the anterior abdominal wall membrane right after perianal abscess.
The heightened interest in liquid organic hydrogen carriers encourages the development of catalysts suitable for multicycle use. To ensure high catalytic activity and selectivity, the structure-reactivity relationship must be extensively investigated. In this study, high-loaded Ni-Cu catalysts were considered for the dehydrogenation of methylcyclohexane. The highest conversion of 85% and toluene selectivity of 70% were achieved at 325 °C in a fixed-bed reactor using a catalyst with a Cu/Ni atomic ratio of 0.23. To shed light on the relationship between the structural features and catalytic performance, the catalysts were thoroughly studied using a wide range of advanced physicochemical tools. The activity and selectivity of the proposed catalysts are related to the uniformity of Cu distribution and its interaction with Ni via the formation of metallic solid solutions. The method of introduction of copper in the catalyst plays a crucial role in the effectiveness of the interaction between the two metals.In-Sn-Zn oxide (ITZO) nanocomposite films have been investigated extensively as a potential material in thin-film transistors due to their good electrical properties. In this work, ITZO thin films were deposited on glass substrates by high-power impulse magnetron sputtering (HiPIMS) at room temperature. The influence of the duty cycle (pulse off-time) on the microstructures and electrical performance of the films was investigated. The results showed that ITZO thin films prepared by HiPIMS were dense and smooth compared to thin films prepared by direct-current magnetron sputtering (DCMS). With the pulse off-time increasing from 0 μs (DCMS) to 2000 μs, the films' crystallinity enhanced. When the pulse off-time was longer than 1000 μs, In2O3 structure could be detected in the films. The films' electrical resistivity reduced as the pulse off-time extended. Most notably, the optimal resistivity of as low as 4.07 × 10-3 Ω·cm could be achieved when the pulse off-time was 2000 μs. Its corresponding carrier mobility and carrier concentration were 12.88 cm2V-1s-1 and 1.25 × 1020 cm-3, respectively.Quantum dots (QDs) are promising candidates for producing bright, color-pure, cost-efficient, and long-lasting QD-based light-emitting diodes (QDLEDs). However, one of the significant problems in achieving high efficiency of QDLEDs is the imbalance between the rates of charge-carrier injection into the emissive QD layer and their transport through the device components. Here we investigated the effect of the parameters of the deposition of a poly (methyl methacrylate) (PMMA) electron-blocking layer (EBL), such as PMMA solution concentration, on the characteristics of EBL-enhanced QDLEDs. A series of devices was fabricated with the PMMA layer formed from acetone solutions with concentrations ranging from 0.05 to 1.2 mg/mL. The addition of the PMMA layer allowed for an increase of the maximum luminance of QDLED by a factor of four compared to the control device without EBL, that is, to 18,671 cd/m2, with the current efficiency increased by an order of magnitude and the turn-on voltage decreased by ~1 V. At the same time, we have demonstrated that each particular QDLED characteristic has a maximum at a specific PMMA layer thickness; therefore, variation of the EBL deposition conditions could serve as an additional parameter space when other QDLED optimization approaches are being developed or implied in future solid-state lighting and display devices.Nanocrystalline Co2P2O7 and carbon nanofiber (Co2P2O7/CNFs) composites with enhanced electrochemical performance were obtained by calcination after a hydrothermal process with NH4CoPO4∙H2O/bacterial cellulose precursors under an argon atmosphere. SEM images showed that the CNFs were highly dispersed on the surfaces of Co2P2O7 microplates. The diagonal size of the Co2P2O7 plates ranged from 5 to 25 µm with thicknesses on a nanometer scale. Notably, with the optimal calcining temperature, the Co2P2O7/CNFs@600 material has higher specific micropore and mesopore surface areas than other samples, and a maximal specific capacitance of 209.9 F g-1, at a current density of 0.5 A g-1. Interestingly, CNF composite electrodes can enhance electrochemical properties, and contribute to better electrical conductivity and electron transfer. EIS measurements showed that the charge-transfer resistance (Rct) of the CNF composite electrodes decreased with increasing calcination temperature. Furthermore, the Co2P2O7/CNF electrodes exhibited higher energy and power densities than Co2P2O7 electrodes.One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively studied by the scientific research community as a nonvolatile switching material over several decades and have reported many advantages and downsides. However, less attention has been given to low-dimensional materials for resistive memory compared to dielectric films. Particularly, β-Ga2O3 is one of the promising materials for high-power electronics and exhibits the resistive switching phenomenon. However, low-dimensional β-Ga2O3 nanowires have not been explored in resistive memory applications, which hinders further developments. In this article, we studied the resistance switching phenomenon using controlled electron flow in the 1D nanowires and proposed possible resistive switching and electron conduction mechanisms. High-density β-Ga2O3 1D-nanowires on Si (100) substrates were produced via the VLS growth technique using Au nanoparticles as a catalyst. Structural characteristics were analyzed via SEM, TEM, and XRD. Besides, EDS, CL, and XPS binding feature analyses confirmed the composition of individual elements, the possible intermediate absorption sites in the bandgap, and the bonding characteristics, along with the presence of various oxygen species, which is crucial for the ReRAM performances. The forming-free bipolar resistance switching of a single β-Ga2O3 nanowire ReRAM device and performance are discussed in detail. The switching mechanism based on the formation and annihilation of conductive filaments through the oxygen vacancies is proposed, and the possible electron conduction mechanisms in HRS and LRS states are discussed.While multi-drug resistance in bacteria is an emerging concern in public health, using carbon dots (CDs) as a new source of antimicrobial activity is gaining popularity due to their antimicrobial and non-toxic properties. Here we prepared carbon dots from citric acid and β-alanine and demonstrated their ability to inhibit the growth of diverse groups of Gram-negative bacteria, including E. coli, Salmonella, Pseudomonas, Agrobacterium, and Pectobacterium species. Carbon dots were prepared using a one-pot, three-minute synthesis process in a commercial microwave oven (700 W). The antibacterial activity of these CDs was studied using the well-diffusion method, and their minimal inhibitory concentration was determined by exposing bacterial cells for 20 h to different concentrations of CDs ranging from 0.5 to 10 mg/mL. Our finding indicates that these CDs can be an effective alternative to commercially available antibiotics. We also demonstrated the minimum incubation time required for complete inhibition of bacterial growth, which varied depending on bacterial species. Oleic clinical trial With 15-min incubation time, A. tumefaciens and P. aeruginosa were the most sensitive strains, whereas E. coli and S. enterica were the most resistant bacterial strains requiring over 20 h incubation with CDs.The crystalline quality of ZnO NR (nanorod) as a sensing material for visible blind ultraviolet PDs (photodetectors) critically depends on the SL (seed layer) material of properties, which is a key to high-quality nanocrystallite growth, more so than the synthesis method. In this study, we fabricated two different device structures of a gateless AlGaN/GaN HEMT (high electron mobility transistor) and a photoconductive PD structure with an IDE (interdigitated electrode) pattern implemented on a PET (polyethylene terephthalate) flexible substrate, and investigated the impact on device performance through the SL N2O plasma treatment. In case of HEMT-based PD, the highest current on-off ratio (~7) and spectral responsivity R (~1.5 × 105 A/W) were obtained from the treatment for 6 min, whereas the IDE pattern-based PD showed the best performance (on-off ratio = ~44, R = ~69 A/W) from the treatment for 3 min and above, during which a significant etch damage on PET substrates was produced. This improvement in device performance was due to the enhancement in NR crystalline quality as revealed by our X-ray diffraction, photoluminescence, and microanalysis.We investigated the colorimetric behaviors of metal surfaces with unidirectional low-spatial-frequency laser-induced periodic surface structures (UD-LSFLs) and omnidirectional LSFLs (OD-LSFLs) fabricated using femtosecond laser pulse irradiation. With the CIE standard illuminant D65, incident at -45°, we show that UD-LSFLs on metals transform polished metals to gonio-apparent materials with a unique behavior of colorimetric responses, depending on both the detection and rotation angles, whereas OD-LSFLs have nearly uniform gonio-apparent colors at each detection angle, regardless of their rotation. These colorimetric behaviors can be observed not only at the angles of diffraction but also near the angle of reflection, and we find that the power redistribution due to Rayleigh anomalies also plays an important role in the colorimetric responses of UD- and OD-LSFLs, in addition to diffraction.In this paper, the conditions of the dip-coating method of SiO2 nanospheres are optimized, and a neatly arranged single-layer SiO2 array is obtained. On this basis, a "top-down" inductively coupled plasma (ICP) technique is used to etch the p-GaN layer to prepare a periodic triangular nanopore array. After the etching is completed, the compressive stress in the epitaxial wafer sample is released to a certain extent. Then, die processing is performed on the etched LED epitaxial wafer samples. The LED chip with an etching depth of 150 nm has the highest overall luminous efficiency. Under a 100 mA injection current, the light output power (LOP) of the etched 150 nm sample is 23.61% higher than that of the original unetched sample.Two-dimensional CuFeSe2 nanosheets have been successfully obtained via solution-phase synthesis using a sacrificial template method. The high purity was confirmed by X-ray diffraction and the two-dimensional morphology was validated by transmission electron microscopy. The intense absorption in the 400-1400 nm region has been the basis for the CuFeSe2 nanosheets' photothermal capabilities testing. The colloidal CuFeSe2 (CFS) nanosheets capped with S2- short ligands (CFS-S) exhibit excellent biocompatibility in cell culture studies and strong photothermal effects upon 808 nm laser irradiation. The nanosheets were further loaded with the cancer drug doxorubicin and exposed to laser irradiation, which accelerated the release of doxorubicin, achieving synergy in the therapeutic effect.
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