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Recently, the advanced oxidation processes (AOPs) based on sulfate radicals (SRs) for organics degradation have become the focus of water treatment research as the oxidation ability of SRs are higher than that of hydroxyl radicals (HRs). Since the AOP-SRs can effectively mineralize organics into carbon dioxide and water under the optimized operating conditions, they are used in the degradation of refractory organics such as dyes, pesticides, pharmaceuticals, and industrial additives. SRs can be produced by activating persulfate (PS) with ultraviolet, heat, ultrasound, microwave, transition metals, and carbon. The activation of PS in iron-based transition metals is widely studied because iron is an environmentally friendly and inexpensive material. This article reviews the mechanism and application of several iron-based materials, including ferrous iron (Fe2+), ferric iron (Fe3+), zero-valent iron (Fe0), nano-sized zero-valent iron (nFe0), materials-supported nFe0, and iron-containing compounds for PS activation to degrade refractory organics. In addition, the current challenges and perspectives of the practical application of PS activated by iron-based systems in wastewater treatment are analyzed and prospected.Design of plasmonic substrates is of immense importance for high sensitivity and spatial resolution in plasmon-enhanced spectroscopy. In this study, the enhancement factors (EFs) of tip-enhanced coherent anti-Stokes Raman scattering (TECARS) contributed by surface and quantum coherent effects in the ultraviolet region are theoretically analyzed using three-dimensional finite-difference time-domain (3D-FDTD) method. In the multi-resonant TECARS configuration, surface and coherent EFs of 1018and 109, respectively, can be achieved by considering the synthetic effect of surface and coherent enhancement mechanisms, providing the total TECARS EF of 1027and sub-5 nm spatial resolution. Our theoretical results not only provide a deeper understanding of ultraviolet (UV)-TECARS but also can be used as a highly efficient reference for the experimental design of TECARS platform.Electric field enhancement in semiconductor nanostructures offers a possibility to find an alternative to the metallic particles which is well known for tuning the light-matter interaction due to its strong polarizability and size-dependent surface plasmon resonance energy. Raman spectroscopy is a powerful technique to monitor the electric field as its scattering depends on the electromagnetic eigenmode of the particle. Here, we observe enhanced polarized Raman scattering from germanium nanowires of different diameters. The incident electromagnetic radiation creates a distribution of the internal electric field inside the naowires which can be enhanced by manipulating the nanowire diameter, the incident electric field and its polarization. Our estimation of the enhancement factor, including its dependence on nanowire diameter, agrees well with the Mie theory for an infinite cylinder. Furthermore, depending on diameter and wavelength of incident radiation, polarized Raman study shows dipolar (antenna effect) and quadrupolar resonances, which has never been observed in germanium nanowire. We attempt to understand this polarized Raman behavior using COMSOL Multiphysics simulation, which suggests that the pattern observed is due to photon confinement within the nanowires. Thus, the light scattering direction can be toggled by tuning the polarization of incident excitation and diameter of non plasmonic nanowire.Using density functional theory, we investigate the adsorption behavior of CO, NH3, and NO molecules on monolayer Si2BN. The energetically favorable structural configurations along with their adsorption energies, charge transfers, and electronic properties are discussed. The CO and NH3 molecules show physisorption with moderate adsorption energies, whereas the NO molecule is subject to chemisorption. We further calculate the current-voltage characteristics using the non-equilibrium Green's function formalism. Significant anisotropy is observed for the armchair and zigzag directions, consistent with the anisotropy of the electronic band structure. Pronounced enhancement of the resistivity upon gas adsorption indicates that monolayer Si2BN is promising as gas sensing material.This work studies the optical reflectance of nanoporous gold (NPG) thin films of varying pore volume fraction (PVF) synthesized by chemically dealloying Ag-Au alloy precursor. The fabricated samples are characterized by scanning electron microscopy, and spectral hemispherical reflectance is measured with an integrating sphere. Tecovirimat cost The effective isotropic optical constants of NPG with varying PVF are modeled for the wavelength range from 0.4 to 1.6 μm using the Bruggeman effective medium theory. As the thickness of the NPG thin films is more than 10 times larger than the effective penetration depth, the spectral reflectance is simply modeled with the Fresnel coefficients at the interface of air and semi-infinite NPG with different incident angles and polarizations. Consistent with the modeling results, the optical measurement data shows that the spectral normal reflectance of NPG significantly decreases with larger PVF values in the near infrared. On the other hand, the reflectance increases greatly only within visible range at larger oblique angles for transverse-electric polarized waves than transverse-magnetic waves. Moreover, the NPG samples demonstrate good thermal stability from room temperature up to 100C with little changes in the temperature-dependent spectral hemispherical reflectance.High entropy alloy has attracted extensive attention in nuclear energy due to the outstanding irradiation resistance, partially owing to the sluggish diffusion. The mechanism from defect-generation aspect, however, has received much less attention. In this paper, the formation of dislocation loops, and migration of interstitials and vacancies in CoNiCrFeMn high entropy alloy under consecutive bombardments were studied by molecular dynamics simulations. Compared to pure Ni, less defects were produced in the CoNiCrFeMn. Only few small dislocation loops were observed, and the length of dislocation was small. The dislocation loops in Ni matrix were obviously longer, and so was the length of dislocation. The interstitial clusters had much smaller mean free path during migration in the CoNiCrFeMn. The mean free path of 10-interstitial clusters in CoNiCrFeMn was reduced over 40 times compared to that in pure Ni. In addition, CoNiCrFeMn had smaller difference of migration energy between interstitial and vacancy, which increased the opportunity of recombination of defects, therefore, led to less defects and much fewer dislocation loops. Our results provide insights of the mechanism of irradiation resistance in the high entropy alloy and could be useful in material design for irradiation tolerance and accident tolerance materials in nuclear energy.Ferroelectric random-access memories based on conventional perovskite materials are non-volatile but suffer from lack of CMOS compatibility, scalability limitation, and a destructive reading scheme. On the other hand, Ferroelectric Tunnel Junctions (FTJs) based on CMOS compatible hafnium oxide are a promising candidate for future non-volatile memory technology due to their simple structure, scalability, low power consumption, high operation speed, and non-destructive read-out operation. Herein, we report an efficient strategy based on the interface-engineering approach to improve upon the tunneling electroresistance effect and data retention by depositing bilayer oxide heterostructure (Al2O3/Hf0.5Zr0.5O2) using atomic layer deposition (ALD) on Ge substrate which is treated in-situ ALD chamber with H2-plasma before film deposition. Integrating a thin ferroelectric layer i.e. Hf0.5Zr0.5O2 (8.4 nm) with a thin interface layer i.e. Al2O3 (1 nm) allowed us to reduce the operation (read and write) voltage to 1.4 V, and 4.3 V, respectively, while maintaining a good tunneling electroresistance or ON/OFF ratio above 10. Furthermore, an extrapolation to 1000 years at room temperature gives a residual ON/OFF ratio of 4.In this work we describe a proposal for a graphene-based nanostructure that modulates electric current even in the absence of a gap in the band structure. The device consists of a graphene p-n junction that acts as a Veselago lens that focuses ballistic electrons on the output lead. Applying external (electric and magnetic) fields changes the position of the output focus, reducing the transmission. Such device can be applied to low power field effect transistors, which can benefit from graphene's high electronic mobility.Some novel magnetic behaviours in double perovskite Eu2CoMnO6 (ECMO) have been reported. The x-ray photoemission spectroscopy study shows the presence of mixed valence states of transition metal ions. The UV-visible absorption spectroscopic study suggests that the ECMO has a direct wide band gap. A second-order magnetic phase transition as a sudden jump in the magnetization curve has been observed around 124.5 K. The large bifurcation between the zero field cooling and field cooling, suggests existence of strong spin frustration in the system. The inverse DC susceptibility confirms the presence of the Griffiths like phase. Sharp steps in magnetization have been observed in the M-H curve at 2 K, which vanishes on increasing temperature. The AC susceptibility study demonstrates the Hopkinson like effect as well as the presence of volume spin-glass-like behaviour. The temperature dependent Raman spectrum shows the presence of spin-phonon coupling.Postmortem analysis of the brain from a blind human subject that had a cortical visual prosthesis implanted for 36 years (Dobelle, 2000) provides insight into the optimal design characteristics of a successful human cortical visual prosthesis, by revealing, (a) unexpected rotation of the electrode array about 40 degrees away from the midsagittal plan, thought to be due to the torque of the connecting cable, (b) degeneration of the platinum electrodes, and (c) only partial coverage of the primary visual cortex by the rectangular array. The electrode array only overlapped with the anterior 45% of primary visual cortex (identified by the line of Gennari), largely missing the posterior foveal representation of visual cortex. Histology did not reveal appreciable loss of neurons in cortex that surrounded the migrated array, perhaps due to the very slow rotation of this implant. The proportion of stimulated electrodes that elicited phosphenes was higher over extrastriate cortex, compared to striate cortex (p less then .05). This pioneering effort to develop a cortical visual prosthesis suggests that to maximize efficacy, the long-term effects of implanted alien materials on nervous tissue, and vice versa, need to be considered in detail, and that electrode array design considerations need to optimally match the electrodes to the patient's cortical anatomy. Modern pre-implant imaging can help optimize future implants by identifying the location and extent of bridging veins with MRI and even map the location of the V1/V2 border in vivo with PET.
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