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We also compared the thermal behaviors of these fabricated large scale SBDs on Si and a CVD diamond substrate.The interface reaction between a metal layer and a layer of amorphous indium-gallium-zinc oxide was investigated. Oxygen atoms at the interface bond to the metal atoms and form metal oxide. The reaction depends on the annealing temperature and ambient conditions. The thickness of the metal oxide at the interface increased with the annealing temperatures. The reaction relies on the Gibbs free energy for oxidation. Ta, which has low Gibbs free energy formed a 33 nm layer of tantalum oxide at an annealing temperature of 450 °C. The HR-TEM and EDX observation showed that the metal oxide thicknesses were 5, 10, and 33 nm at annealing temperatures of 350, 400, and 450 °C, respectively. The thicknesses obtained with both Ar and oxygen gas were 4, 8, and 21 nm, respectively. The lower oxide thicknesses were attributed to the lower number of oxygen vacancies in the IGZO deposited using Ar and oxygen, which was identified by XPS analysis.Ag-paste is used as an electrode material in various fields as a manufacturing advantage that enables solution processing. However, when a subsequent thin film is formed on the solidified Ag-paste electrode, there is a fear that the bonding force between the Ag-paste electrode and the subsequent thin film is weakened and peeled off due to the low surface energy of the Agpaste electrode. It is necessary to increase the surface energy of the Ag-paste electrode surface since it ultimately directly affects the yield of the device or product. In this study, the UV/ozone treatment process was introduced to increase the Ag-paste surface energy, thereby making the surface hydrophilic. Additionally, it was confirmed that the UV/ozone treatment process affected only the surface of the Ag-paste electrode by extracting the contact resistance.In this study, we demonstrated the defect-selective etching and epitaxy technique for defect reduction of a heteroepitaxial chemical vapor deposition (CVD) diamond substrate. First, an 8 nm layer of nickel was deposited on the diamond surface using an e-beam evaporator. Then, defect-selective etching was conducted through an in situ single process using microwave plasma chemical vapor deposition (MPCVD). After defect-selective etching, the diamond layer was overgrown by MPCVD. The defect density measured from the atomic force microscope image decreased from 3.27×108 to 2.02×108 cm-2. The first-order Raman peak of diamond shifted from 1340 to 1336 cm-1, and the full width at half maximum (FWHM) decreased from 9.66 to 7.66 cm-1. Through the defect-selective etching and epitaxy technique, it was confirmed that the compressive stress was reduced and the crystal quality improved.In this study, we examined the highly selective sensing of Fe3+ ions in water using metal complex-functionalized mesoporous silica materials. Metal complex-functionalized mesoporous silica materials were synthesized on the mesoporous surface of SBA-15 via complexation process between Eu3+ and aminosilane groups. Mesoporous silica, SBA-15, and the Eu3+-complex functionalized SBA-15 were characterized using X-ray diffraction (XRD), transmittance electron microscopy (TEM), nitrogen sorption behavior, and Fourier transform infrared (FTIR) spectroscopy. The sensing behavior of the Eu3+-complex functionalized SBA-15 was studied using various metal ions (Fe3+, Cu2+, Cr3+, Co2+, Hg2+, Pb2+, and Zn2+) aqueous solutions. Photoluminescence intensity (λ = 612 nm) of the Eu3+-complex functionalized SBA-15 was dependent on the different interactions between metal ions and Eu3+-complexes. buy Apoptozole Photoluminescence intensity at λ = 612 nm of the Eu3+-complex functionalized SBA-15 decreased to near zero and proved the highly selective sensing effect of Fe3+. Therefore, the Eu3+-complex functionalized SBA-15 can be considered an excellent candidate for sensing iron ions in water.Carbon monoxide (CO) is an odorless, colorless, tasteless, extremely flammable, and highly toxic gas. It is produced when there is insufficient oxygen supply during the combustion of carbon to produce carbon dioxide (CO₂). CO is produced from operating engines, stoves, or furnaces. CO poisoning occurs when CO accumulates in the bloodstream and can result in severe tissue damage or even death. Many types of CO sensors have been reported, including electrochemical, semiconductor metal-oxide, catalytic combustion, thermal conductivity, and infrared absorption-type for the detection of CO. However, despite their excellent selectivity and sensitivity, issues such as complexity, power consumption, and calibration limit their applications. In this study, a fabricbased colorimetric CO sensor is proposed to address these issues. Potassium disulfitopalladate (II) (K₂Pd(SO₃)₂) is dyed on a polyester fabric as a sensing material for selective CO detection. The sensing characteristics and performance are investigated using optical instruments such as RGB sensor and spectrometer. The sensor shows immediate color change when exposed to CO at a concentration that is even lower than 20 ppm before 2 min. The fast response time of the sensor is attributed to its high porosity to react with CO. This easy-to-fabricate and cost-effective sensor can detect and prevent the leakage of CO simultaneously with high sensitivity and selectivity toward CO.In this paper, we investigated TiO₂ as gate dielectric to achieve the large dielectric constant. The ultra high-k value over 30 was obtained by Capacitance-Voltage measurement of Al/Ti/TiO₂/Si Metal-Insulator-Semiconductor (MIS) capacitor. Among as deposited, rapid thermal annealing (RTA) at 750 °C and 1000 °C, the RTA at 750 °C showed the lowest gate leakage current. It implies that TiO₂ has optimum RTA temperature having the lowest leakage current. When TiO₂ is annealed at 750 °C, the phase of TiO₂ changes to anatase and interfacial layer between TiOx and Si was formed. While TiO₂ is annealed at 1000 °C, the phase of TiO₂ changes to rutile and diffusion of silicon atoms was clearly observed and it causes the silicide formation. Based on measurement data, we proposed the energy band diagram of Al/TiO₂/Si MIS capacitors. This diagram shows that the energy band gap of RTA at 750 °C is expanded while that of RTA at 1000 °C is contracted. In addition, TiO₂ with RTA at 550 °C was tested to confirm leakage current and it shows lower leakage current than RTA at 750 °C as we expected.
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