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We present a detailed analysis of techniques to mitigate the effects of phase noise and Doppler-induced frequency offsets in coherent random amplitude modulated continuous-wave (RAMCW) LiDAR. The analysis focuses specifically on a technique which uses coherent dual-quadrature detection to enable a sum of squares calculation to remove the input signal's dependence on carrier phase and frequency. This increases the correlation bandwidth of the matched-template filter to the bandwidth of the acquisition system, whilst also supporting the simultaneous measurement of relative radial velocity with unambiguous direction-of-travel. A combination of simulations and experiments demonstrate the sum of squares technique's ability to measure distance with consistently high SNR, more than 15 dB better than alternative techniques whilst operating in the presence of otherwise catastrophic phase noise and large frequency offsets. In principle, the technique is able to mitigate any sources of phase noise and frequency offsets common to the two orthogonal outputs of a coherent dual-quadrature receiver including laser frequency noise, speckle-induced phase noise, and Doppler frequency shifts due to accelerations.General-purpose programmable photonic processors rely on the large-scale integration of beamsplitters and reconfigurable phase shifters, distributed within unit cells or photonic gates. With their future evolution threatened by several hardware constrains, including the integration density that can be achieved with current mesh topologies, in this work, we present a unit cell topology design to increase the integration density of waveguide mesh arrangements based on folded Mach-Zehnder Interferometers. We report the design details of a 40-unit cell waveguide mesh integrated in a 11mm x 5.5 mm silicon nitride chip achieving, to the best of our knowledge, the highest integration density reported to date for a general-purpose photonic processor. see more The chip is electrically interfaced to a PCB and we report examples of reconfigurable optical beamsplitters, basic tunable microwave photonic filters with high peak rejection (40 dB approx.), as well as the dynamic interconnection and routing of 5G digitally modulated signals within the photonic mesh.This work theoretically investigates the frequency noise and spectral linewidth characteristics of mutually delay-coupled quantum cascade lasers, which are operated in the stable locking regime. We demonstrate that the mutual injection significantly reduces the frequency noise at proper coupling phases. However, the relative intensity noise is insensitive to the mutual injection. Influences of the pump current, the linewidth broadening factor, the coupling phase, and the delay time on the frequency noise are discussed as well. In addition, it is found that the appearance of multiple compound laser modes can deteriorate the frequency noise performance of the lasers.A stable passively mode-locked Er-doped silica fiber laser with a fundamental repetition rate of up to 5 GHz is demonstrated, which, to the best of our knowledge, is the highest repetition rate for 1.5 μm semiconductor saturable absorber mirror (SESAM) mode-locked Er-doped silica fiber (EDF) lasers. A segment of commercially available EDF with a net gain coefficient of 1 dB/cm is employed as gain medium. The compact Fabry-Pérot (FP) cavity features a fiber mirror, namely multiple-layer dielectric films (DFs) directly coated on end facet of a passive fiber ferrule, enabling a short cavity length of 2 cm configured. The mode-locked oscillator operates at 1561.0 nm with a signal-to-noise ratio (SNR) of 62.1 dB, whose average power is boosted to 27 mW by a single-mode Er-doped fiber amplifier (EDFA) and spectral bandwidth is broadened form 0.69 nm to 1.16 nm with a pulse width of 3.86 ps. The fiber laser shows excellent spectral stability without conspicuous wavelength drifting for 3 hours. Moreover, the basic guidelines of selecting SESAM for high repetition rate passively mode-locked fiber lasers is given.Auger recombination is an ultrafast and unnegligible photophysical process in colloidal semiconductor quantum dots (QDs) due to competition with charge separation or radiative recombination processes, pivotal for their applications ranging from bio-labeling, light-emitting diodes, QD lasing to solar energy conversion. Among diverse QDs, ternary chalcopyrite is recently receiving significant attention for its heavy-metal free property and remarkable optical performance. Given deficient understanding of the Auger process for ternary chalcopyrite QDs, CuInS2 QDs with various sizes are synthesized as a representative and the bi-exciton lifetime (τBX) is derived by virtue of ultrafast time resolved absorption spectrum. The trend of τBX varying with size is consistent with the universal scaling of τBX versus QD volume (V) τBX = γV. The scaling factor γ is 6.6 ± 0.5 ps·nm-3 for CuInS2 QDs, and the bi-exciton Auger lifetime is 4-5 times slower than typical CdSe QDs with the same volume, suggesting reduced Auger recombination rate in ternary chalcopyrite. This work facilitates clearer understanding of Auger process and provides further insight for rational design of light-harvesting and emitting devices based on ternary chalcopyrite QDs.A novel white-light copolymer matched with 365 nm chips is prepared by bonding the vinyl-functionalized complexes Eu(TTA)2(Phen)(MAA), Tb(p-BBA)3(UA) and Zn(BTZ)(UA) to polysiloxaneprepolymer(synthesized by polycondensation of vinyltrimethoxysilane and diphenylsilanediol) through a technical route of polymerization after coordination. Its structure was characterized by infrared and ultraviolet. Under the excitation of 365 nm, when the ratio of the tricolor complexes is controlled to be 0.5 3 1.5, white light copolymer with CIE color coordinates of (0.327, 0.321) was obtained and packaged to get white light LED devices. After aging, the CIE color coordinates of the device change from (0.325, 0.329) to (0.341, 0.348), the color rendering index changes from 91 to 88, and the correlated color temperature changes from 5967 K to 5612 K. The loss of brightness is only 10.4%, which shows good resistance to UV aging. Moreover, the initial decomposition temperature of the copolymer is 235°C. The above results show that the bonding-type anti-ultraviolet copolymer phosphor has potential application in near ultraviolet LEDs.
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