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A mirror twin-domain boundary (MTB) in monolayer MoSe2 represents a (quasi) one-dimensional metallic system. LY2874455 price Its electronic properties, particularly the low-energy excitations in the so-called 4|4P-type MTB, have drawn considerable research attention. Reports of quantum well states, charge density waves, and the Tomonaga-Luttinger liquid (TLL) have all been made. Here, by controlling the lengths of the MTBs and employing different substrates, we reveal by low-temperature scanning tunneling microscopy/spectroscopy, Friedel oscillations and quantum confinement effects causing the charge density modulations along the defect. The results are inconsistent with charge density waves. Interestingly, for graphene-supported samples, TLL in the MTBs is suggested, whereas that grown on gold, an ordinary Fermi liquid, is indicated.Ionic transport through a charged nanopore at low ion concentration is governed by the surface conductance. Several experiments have reported various power-law relations between the surface conductance and ion concentration, i.e., Gsurf ∝ c0α. However, the physical origin of the varying exponent, α, is not yet clearly understood. By performing extensive coarse-grained Molecular Dynamics simulations for various pore diameters, lengths, and surface charge densities, we observe varying power-law exponents even with a constant surface charge and show that α depends on how electrically "perfect" the nanopore is. Specifically, when the net charge of the solution in the pore is insufficient to ensure electroneutrality, the pore is electrically "imperfect" and such nanopores can exhibit varying α depending on the degree of "imperfectness". We present an ionic conductance theory for electrically "imperfect" nanopores that not only explains the various power-law relationships but also describes most of the experimental data available in the literature.We investigate the energy transport in an organic-inorganic hybrid platform formed between semiconductors that support stable room-temperature excitons. We find that following photoexcitation, fast-moving hot hybrid charge-transfer excitons (HCTEs) are formed in about 36 ps via scattering with optical phonons at the interface between j-aggregates of organic dye and inorganic monolayer MoS2. Once the energy falls below the optical phonon energy, the excess kinetic energy is relaxed slowly via acoustic phonon scattering, resulting in energy transport that is dominated by fast-moving hot HCTEs that transition into cold HCTEs in about 110 ps. We model the exciton-phonon interactions using Fröhlich and deformation potential theory and attribute the prolonged transport of hot HCTEs to phonon bottleneck. We find that the measured diffusivity of HCTEs in both hot and cold regions of transport was higher than the diffusivity of MoS2A exciton and verify these results by conducting the experiments with different excitation energies. This work not only provides significant insight into the initial energy transport of HCTEs at organic-inorganic hybrid interfaces but also contributes to the formulation of a complete physical picture of the energy dynamics in hybrid materials, which are poised to advance applications in energy conversion and optoelectronic devices.We report a vortex-like magnetic configuration in uniaxial ferromagnet Fe3Sn2 nanodisks using differential phase contrast scanning transmission electron microscopy. This magnetic configuration is transferred from a conventional magnetic vortex using a zero-magnetic-field warming process and is characterized by a series of concentric cylinder domains. We termed them as "target bubbles" that are identified as three-dimensional depth-modulated magnetic objects in combination with numerical simulations. Target bubbles have room-temperature stability even at zero magnetic field and multiple stable magnetic configurations. These advantages render the target bubble an ideal bit to be an information carrier and can advance magnetic target bubbles toward functionalities in the long term by incorporating emergent degrees of freedom and purely electrically controllable magnetism.Gallium nitride (GaN) is of technological importance for a wide variety of optoelectronic applications. Defects in GaN, like inversion domain boundaries (IDBs), significantly affect the electrical and optical properties of the material. We report, here, on the structural configurations of planar inversion domain boundaries inside n-doped GaN wires measured by Bragg coherent X-ray diffraction imaging. Different complex domain configurations are revealed along the wires with a 9 nm in-plane spatial resolution. We demonstrate that the IDBs change their direction of propagation along the wires, promoting Ga-terminated domains and stabilizing into 11̅00, that is, m-planes. The atomic phase shift between the Ga- and N-terminated domains was extracted using phase-retrieval algorithms, revealing an evolution of the out-of-plane displacement (∼5 pm, at maximum) between inversion domains along the wires. This work provides an accurate inner view of planar defects inside small crystals.During the past decade, it has been shown that light-matter strong coupling of materials can lead to modified and often improved properties which has stimulated considerable interest. While charge transport can be enhanced in n-type organic semiconductors by coupling the electronic transition and thereby splitting the conduction band into polaritonic states, it is not clear whether the same process can also influence carrier transport in the valence band of p-type semiconductors. Here we demonstrate that it is indeed possible to enhance both the conductivity and photoconductivity of a p-type semiconductor rr-P3HT that is ultrastrongly coupled to plasmonic modes. It is due to the hybrid light-matter character of the virtual polaritonic excitations affecting the linear response of the material. Furthermore, in addition to being enhanced, the photoconductivity of rr-P3HT shows a modified spectral response due to the formation of the hybrid polaritonic states. This illustrates the potential of engineering the vacuum electromagnetic environment to improve the optoelectronic properties of organic materials.
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