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Strain provides an effective means to tune the electrical properties while retaining the native chemical composition of the material. selleck chemicals Unlike three-dimensional solids, two-dimensional materials withstand higher levels of elastic strain making it easier to tune various electrical properties to suit the technology needs. In this work we explore the effect of uniaxial tensile-strain on the electrical transport properties of bi - and few-layered MoS2, a promising 2D semiconductor. Raman shifts corresponding to the in-plane vibrational modes show a redshift with strain indicating a softening of the in-plane phonon modes. Photoluminescence measurements reveal a redshift in the direct and the indirect emission peaks signaling a reduction in the material bandgap. Transport measurements show a substantial enhancement in the electrical conductivity with a high piezoresistive gauge factor of ~ 321 superior to that for Silicon for our bi-layered device. The simulations conducted over the experimental findings reveal a substantial reduction of the Schottky barrier height at the electrical contacts in addition to the resistance of MoS2. Our studies reveal that strain is an important and versatile ingredient to tune the electrical properties of 2D materials and also can be used to engineer high-efficiency electrical contacts for future device engineering. © 2020 IOP Publishing Ltd.Objectiveː Flow-controlled expiration (FLEX) and flow-controlled ventilation (FCV) imply a linearized expiration, and were suggested as new approaches for lung-protective ventilation, especially in case of an inhomogeneous lung. We hypothesized that a linearized expiration homogenizes the pressure distribution between compartments during the expiration, compared to volume controlled (VCV) and pressure controlled (PCV) ventilation. Approach We investigated the expiratory pressure decays in a physical model of an inhomogeneous respiratory system. The model contained four compartments of which two had a high (25 ml∙cmH2O) and two a low compliance (10 ml∙cmH2O-1). These were combined with an either high (6.5 cmH2O∙s∙l-1) or low resistance (2.8 cmH2O∙s∙l-1), respectively. The model was ventilated in all modes at various tidal volumes and peak pressures, and we determined in each compartment the expiratory time at which the pressure declined to 50% (t50) of the end-inspiratory pressure, and the maximal differences of t50 (∆t50) and pressure (∆pmax) between all compartments. Main resultsː During FLEX and FCV, t50 was 6-7 fold higher compared to VCV and PCV (all P less then 0.001). During VCV and PCV, ∆t50 was higher (128±18 ms) compared to FLEX and FCV (49±19 ms; all P less then 0.001). ∆pmax reached up to 3.8±0.2 cmH2O during VCV and PCV, but only 0.6±0.1 cmH2O during FLEX and FCV (P less then 0.001). Significance FLEX and FCV provide a more homogeneous expiratory pressure distribution between compartments with different mechanical properties than VCV and PCV. This may reduce shear stress within inhomogeneous lung tissue. © 2020 Institute of Physics and Engineering in Medicine.CdSe fractional monolayer quantum dots (FMQDs) embedded in a ZnSe matrix were produced by atomic layer epitaxy with a nominal coverage of 0.5 monolayer. They have a thickness of a/2, where a is the strained perpendicular lattice constant of cubic CdSe. Their photoluminescence spectra at low temperature exhibit narrow and intense excitonic emission around 2.759 eV. Based on the experimental excitonic emission energy and applying the factorized-envelope approximation, we have estimated that the lateral dimensions of these FMQDs are around 4 - 5 nm and their density is ~ 3 × 1012cm-2. © 2020 IOP Publishing Ltd.We report a novel mechanism that allows the incorporation of Si into GaN nanowires up to and beyond the solubility limit. It appears during growth on vicinal (misoriented) SiC/Si hybrid substrates at step bunches. Nanowires that are grown at these locations become heavily Si doped. Such high Si concentrations were verified by secondary secondary-ion mass spectrometry. Photoluminescence data also point to very high carrier concentrations. Moreover, Raman spectroscopy together with quantum chemical modelling shows the build in of Si into Ga sites and indicates even the possibility of the formation of a Ga(Si)N solid solution. The microscopic mechanism responsible for heavy doping and even alloying is diffusion driven by the mechano-chemical effect, which allows extremely efficient injection of Si atoms into the nanowires from the step bunches at the vicinal SiC/Si substrates. © 2020 IOP Publishing Ltd.The process of directional crystallization with a quasi-equilibrium mushy region is considered in the steady-state conditions with allowance for the non-linear phase diagram. A complete analytical solution of model equations is found in a parametric form by introducing a new variable - the solid phase fraction in the mushy layer. The temperature and solute concentration, as well as the solid fraction in the mushy layer, its boundaries, and the crystallization velocity, are determined analytically. It is shown that a non-linear phase diagram substantially influences the behaviour of solutions obtained. © 2020 IOP Publishing Ltd.OBJECTIVE To explore the impact of different electrical stimulation profiles in human recipients of the Geneva-Maastricht vestibular implant prototypes. APPROACH Four implanted patients were recruited for this study. We investigated the relative efficacy of systematic variations of the electrical stimulus profile (phase duration, pulse rate, baseline level, modulation depth) in evoking vestibulo-ocular (eVOR) and perceptual responses. MAIN RESULTS Shorter phase durations and, to a lesser extent, slower pulse rates allowed maximizing the electrical dynamic range available for eliciting a wider range of intensities of vestibular percepts. When each either phase duration or pulse rate was held constant, current modulation depth was the factor that had the most significant impact on peak velocity of the eVOR. SIGNIFICANCE Our results identified important parametric variations that influence the measured responses. Furthermore, we observed that not all vestibular pathways seem equally sensitive to the electrical stimulus when the electrodes are placed in the semicircular canals and monopolar stimulation is used.
Homepage: https://www.selleckchem.com/products/gsk1016790a.html
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