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3 μm, and the average hardness at the bottom of cladding layer increased from 260 HV to 288 HV. The yield strength and tensile strength of the tensile parts prepared under forced water cooling increased to a certain extent, while the elongation slightly decreased.The key process steps for growing high-quality Si-based epitaxial films via reduced pressure chemical vapor deposition (RPCVD) are investigated herein. The quality of the epitaxial films is largely affected by the following steps in the epitaxy process ex-situ cleaning, in-situ bake, and loading conditions such as the temperature and gaseous environment. With respect to ex-situ cleaning, dry cleaning is found to be more effective than wet cleaning in 1200 dilute hydrofluoric acid (DHF), while wet cleaning in 130 DHF is the least effective. Tazemetostat mouse However, the best results of all are obtained via a combination of wet and dry cleaning. With respect to in-situ hydrogen bake in the presence of H2 gas, the level of impurities is gradually decreased as the temperature increases from 700 °C to a maximum of 850 °C, at which no peaks of O and F are observed. Further, the addition of a hydrogen chloride (HCl) bake step after the H2 bake results in effective in-situ bake even at temperatures as low as 700 °C. In addition, the effects of temperature and environment (vacuum or gas) at the time of loading the wafers into the process chamber are compared. Better quality epitaxial films are obtained when the samples are loaded into the process chamber at low temperature in a gaseous environment. These results indicate that the epitaxial conditions must be carefully tuned and controlled in order to achieve high-quality epitaxial growth.Label-free live cell imaging was performed using a custom-built high-speed confocal Raman microscopy system. For various cell types, cell-intrinsic Raman bands were monitored. The high-resolution temporal Raman images clearly delineated the intracellular distribution of biologically important molecules such as protein, lipid, and DNA. Furthermore, optical phase delay measured using quantitative phase microscopy shows similarity with the image reconstructed from the protein Raman peak. This reported work demonstrates that Raman imaging is a powerful label-free technique for studying various biomedical problems in vitro with minimal sample preparation and external perturbation to the cellular system.Exposure to different arsenic concentrations (higher than 10 μg/L), either due to the direct consumption of contaminated drinking water or indirectly by using contaminated food is harmful for human health. Therefore, it is important to remove arsenic from aqueous solutions. Among many arsenic removal technologies, adsorption offers a promising solution with a good efficiency, however the material used as adsorbent play a very vital role. The present investigation evaluated the behavior of two cellulose-based adsorbent materials, i.e., viscose fibers (V) and its TEMPO (2,2,6,6-tetramethylpiperidine-1-oxyl) derivative, obtained by using the well-established TEMPO-mediated protocol (VF). Due to the known arsenic affinity for Fe ions the two materials were later doped with it. This was done after a preliminary functionalization with di-2-ethylhexyl phosphoric acid (DEHPA), to obtain two materials V-DEHPA-Fe and VF-DEHPA-Fe. Arsenic adsorption is known to be pH dependent (between 6 and 8); therefore, the optimal pH range for As(V) adsorption has been established. In order to evaluate the adsorption mechanism for both the synthesized materials, the influence of contact time, temperature and initial concentration was evaluated. Langmuir, Freundlich and Sips equilibrium isotherm models were used in order to determine the ability of the model to describe As(V) adsorption process. The maximum adsorption capacity of the material V-DEHPA-Fe was 247.5 µg As(V)/g with an As(V) initial concentration of 5 mg/L and for the material VF-DEHPA-Fe it was 171.2 µg As(V)/g with initial concentration of 5 mg/L.The FeCoNiCrTi0.2 high-entropy alloys fabricated by vacuum arc melting method, and the annealed pristine material, are face centered cubic structures with coherent γ' precipitation. Samples were irradiated with 50 keV He+ ions to a fluence of 2 × 1016 ions/cm2 at 723 K, and an in situ annealing experiment was carried out to monitor the evolution of helium bubbles during heating to 823 and 923 K. The pristine structure of FeCoNiCrTi0.2 samples and the evolution of helium bubbles during in situ annealing were both characterized by transmission electron microscopy. The annealing temperature and annealing time affect the process of helium bubbles evolution and formation. Meanwhile, the grain boundaries act as sinks to accumulate helium bubbles. However, the precipitation phase seems have few effects on the helium bubble evolution, which may be due to the coherent interface and same structure of γ' precipitation and matrix.The article draws attention to the problem of the presence of metals germanium (Ge), tellurium (Te), thallium (Tl), and others (Cd, Ba, Co, Mn, Cr, Cu, Ni, Pb, Sr, and Zn) in selected waste of electrical and electronic equipment (WEEE). As a result of the growing demand for new technologies, the global consumption of TECs has also been increasing. Thus, the amount of metals in circulation, of which the impacts on the environment have not yet been fully understood, is constantly increasing. Due to the low content of these metals in WEEE, they are usually ignored during e-waste analyses. The main aim of this study was to determine the distribution of Ge, Te, and Tl (and other elements) in ground sieve fractions (1.0, 0.5, 0.2, and 0.1 mm) of selected electronic components (solar lamps, solar cell, LED TV screens, LCD screens, photoresistors, photodiodes, phototransistors) and to determine the possible tendency of the concentrations of these metals in fractions. This problem is particularly important because WEEE recycling processes (crushing, grinding, and even collection and transport operations) can lead to dispersion and migration of TCE pollutants into the environment. The quantitative composition of e-waste was identified and confirmed by ICP-MS, ICP-OES and SEM-EDS, and XRD analyses. It was found that Ge, Te, and Tl are concentrated in the finest fractions of ground e-waste, together with Cd and Cr, which may favor the migration of these pollutants in the form of dust during storage and processing of e-waste.
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