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Leprosy in children inside Cuba: Epidemiological and also medical explanation of 50 cases through 2012-2019.
without mucinous carcinoma despite their higher likelihood of receiving chemotherapy (89.6 vs. 71.9%, p=0.009). Multivariate analysis revealed presence of perineural invasion (HR 1.865, p=0.002), extranodal invasion (HR 1.869, p=0.009), T4 stage (HR 1.617, p=0.019), and M1 stage tumors (HR 3.643, p<0.001) but not mucinous carcinoma to significantly predict poor survival in CRC patients.

In conclusion, our findings indicate colorectal tumors with mucinous carcinoma histology to have a more aggressive tumor characteristics and advanced disease stage on admission in CRC patients as well as shorter OS time and DFS time specifically in colon cancer patients despite receiving chemotherapy.

Chemotherapy, Colorectal cancer, Long-term follow up, Mucinous histology, Survival.
Chemotherapy, Colorectal cancer, Long-term follow up, Mucinous histology, Survival.Constructing sulfur hosts with high electronic conductivity, large void space, strong chemisorption, and rapid redox kinetics is critically important for their practical applications in lithium-sulfur batteries (LSBs). Herein, by coupling ZnS quantum dots (QDs) with carbon nanotubes (CNTs), one multifunctional sulfur host CNT/ZnS-QDs is designed via a facile one-step hydrothermal method. SEM and TEM analyses reveal that small ZnS-QDs ( less then 5 nm) are uniformly anchored on the CNT surface as well as encapsulated into CNT channels. This special architecture ensures sulfur direct contacting with highly conductive CNTs; meanwhile, the catalytic effect of anchored ZnS-QDs improves the chemisorption and confinement to polysulfides. Benefiting from these merits, when used as sulfur hosts, this special architecture manifests a high specific capacity, superior rate capability, and long-term cycling stability. The ZnS-QDs dependent electrochemical performance is also evaluated by adjusting the mass ratio of ZnS-QDs, and the host of CNT/ZnS-QDs 27% owns the optimal cell performance. The specific capacity decreases from 1051 mAh g-1 at 0.2 C to 544 mAh g-1 at 2.0 C, showing rate capability much higher than CNT/S and other CNT/ZnS-QDs/S samples. After 150 cycles, the cyclic capacity at 0.5 C exhibits a slow reduction from 1051 mAh g-1 to 771 mAh g-1, showing a high retention of 73.4% with a coulombic efficiency of over 99%. The electrochemical impedance spectroscopy analyses demonstrate that this special architecture juggles high conductivity and excellent confinement of polysulfides, which can significantly suppress the notorious shuttle effect and accelerate the redox kinetics. The strategy in this study provides a feasible approach to design efficient sulfur hosts for realizing practically usable LSBs.Phonons play a fundamental role in the electronic and thermal transport of 2D materials which is crucial for device applications. In this work, we investigate the temperature-dependence of A[Formula see text] and A[Formula see text] Raman modes of suspended and supported mechanically exfoliated few-layer gallium sulfide (GaS), accessing their relevant thermodynamic Grüneisen parameters and anharmonicity. 2-Bromohexadecanoic manufacturer The Raman frequencies of these two phonons soften with increasing temperature with different [Formula see text] temperature coefficients. The first-order temperature coefficients θ of A[Formula see text] mode is ∼ -0.016 cm-1/K, independent of the number of layers and the support. In contrast, the θ of A[Formula see text] mode is smaller for two-layer GaS and constant for thicker samples (∼ -0.006 2 cm-1 K-1). Furthermore, for two-layer GaS, the θ value is ∼ -0.004 4 cm-1 K-1 for the supported sample, while it is even smaller for the suspended one (∼ -0.002 9 cm-1 K-1). The higher θ value for supported and thicker samples was attributed to the increase in phonon anharmonicity induced by the substrate surface roughness and Umklapp phonon scattering. Our results shed new light on the influence of the substrate and number of layers on the thermal properties of few-layer GaS, which are fundamental for developing atomically-thin GaS electronic devices.Solution processing of amorphous oxide semiconductors (AOS) is used for electronic and optoelectronic applications. However, the device performance is much lower than that for a device that is fabricated using vacuum processing. This study uses acetylacetone (acac) as an additive in the precursor solution to reduce the nanocluster size in a ZnSnO (ZTO) film. A metal-semiconductor-metal (MSM)-type UV photodetector (PD) is fabricated using as-prepared ZTO film. ZTO film that features a smaller nanocluster size, so more oxygen vacancies are induced, which produces more electrons and the photocurrent is increased. The surface at the metal/semiconductor interface is smoother so there is greater contact with fewer interface states and the dark current is decreased. An extremely high photo-to-dark current ratio (PDCR) of 1314 is achieved for a solution-processed ZTO MSM-type PD.The structural, magnetic and dielectric properties have been investigated in 3d-5d based double perovskite Sr2FeIrO6 thin films deposited by pulse laser deposition technique. To understand the effect of strain, epitaxial films are grown with varying thickness as well as on different substrates i.e., SrTiO3 (100) and LaAlO3 (100). The films with highest thickness are found to be more relaxed. Atomic force microscope images indicate all films are of good quality where grain sizes increase with increase in film thickness. X-ray absorption (XAS) spectroscopy measurements indicate a Ir5+ charge state in present films while providing a detailed picture of hybridization between Fe/Ir-d and O-p orbitals. The bulk antiferromagnetic transition is retained in films though the transition temperature shifts to higher temperature. Both dielectric constant (ϵ r) and loss (tan  δ) show change around the magnetic ordering temperatures of bulk Sr2FeIrO6 indicating a close relation between dielectric and magnetic behaviors. A Maxwell-Wagner type relaxation is found to follow over whole frequency range down to low temperature in present film. On changing the substrate i.e., LaAlO3 (100), the ϵ r(T) and (tan  δ(T)) show almost similar behavior but ϵ r shows a higher value which is due to an increased strain coming from high mismatch of lattice parameters.
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