Notes

Creation regarding Pyrroloindolines through the Alkylation regarding Tryptamines together with Trichloroacetimidates.
Energy transfer plays a pivotal role in applying lanthanide-doped upconversion nanoparticles (UCNPs) as optical probes for diverse applications, particularly in biology and medicine. However, achieving tunable energy transfer from UCNPs to different acceptors remains a daunting challenge. Here, we demonstrate that using small organic molecules as linkers, the energy transfer from UCNPs to acceptors can be modulated. Specifically, organic linkers can enable efficient energy transfer from NaGdF4Yb/Tm@NaGdF4 core-shell UCNPs to different acceptors. Moreover, the organic linker-mediated energy transfer can be facilely tuned by simply changing organic linkers. Based on our mechanistic investigations, the extraction of Gd3+ migrated energy from UCNPs by organic linkers and the subsequent energy injection from linkers to acceptors should be the two key processes for controlling the energy transfer. The tunable energy transfer from UCNPs allows us to design novel applications, including sensors and optical waveguides, based on UCNPs. These findings may open up new ways to develop UCNP-based bioapplications and advance further fabrication of hybrid upconversion nanomaterials.The resistive switching behavior in resistive random access memories (RRAMs) using atomic-layer-deposited Ga2O3/ZnO composite film as the dielectric was investigated. By alternatively atomic-layer-depositing Ga2O3 and ZnO with different thickness, we can accurately control the oxygen vacancy concentration. When regulating ZnO to ∼31%, the RRAMs exhibit a forming-free property as well as outstanding performance, including the ratio of a high resistance state to the low resistance state of 1000, retention time of more than 1 × 104 s, and the endurance of 100. GSK1838705A purchase By preparing RRAMs of different Zn concentration, we carried out a comparative study and explored the physical origin for the forming-free property as well as good performance. Finally, a unified model is proposed to account for the resistive switching and the current conduction mechanism, providing meaningful insights in the development of high-quality and forming-free RRAMs for future memory and neuromorphic applications.HfO2 and ZrO2 have increasingly drawn the interest of researchers as lead-free and silicon technology-compatible materials for ferroelectric, pyroelectric, and piezoelectric applications in thin films such as ferroelectric field-effect transistors, ferroelectric random access memories, nanoscale sensors, and energy harvesters. Owing to the environmental regulations against lead-containing electronic components, HfO2 and ZrO2 offer, along with AlN, (K,Na)NbO3- and (Bi0.5Na0.5)TiO3-based materials, an alternative to Pb(ZrxTi1-x)O3-based materials, which are the overwhelmingly used ceramics in industry. HfO2 and ZrO2 thin films may show field-induced phase transformation from the paraelectric tetragonal to the ferroelectric orthorhombic phase, leading to a change in crystal volume and thus strain. These field-induced strains have already been measured experimentally in pure and doped systems; however, no systematic optimization of the piezoelectric activity was performed, either experimentally or theoretically. In this screening study, we calculate the ultimate size of this effect for 58 dopants depending on the oxygen supply and the defect incorporation type substitutional or interstitial. The largest piezoelectric strain values are achieved with Yb, Li, and Na in ZrO2 and exceed 40 pm V-1 or 0.8% maximal strain, which exceeds the best experimental findings by a factor of 2. Furthermore, we discovered that Mo, W, and Hg make the polar-orthorhombic phase in the ZrO2 bulk stable under certain circumstances, which would count in favor of these systems for the ceramic crystallization process. Our work guides the development of the performance of a promising material system by rational design of the essential mechanisms so as to apply it to unforeseen applications.Liquid-solid triboelectrification technology provides a new way to collect hydropower, while the high cost, complexity, and easily damaged microstructures of the triboelectric nanogenerator electrode materials highly limit their practical applications. In this study, a new type of organic coating triboelectric nanogenerator is fabricated using acrylate resin as the friction layer material. To further improve the solid-liquid triboelectrification performance and the hydrophobicity of the coating, fluorine-containing materials were added to the acrylic resin. As a non-microstructure-dependent film, its preparation process is simple and large area prepared, which can be achieved by modifying some commonly used anticorrosion and antifouling coatings in engineering. This packaged organic coating triboelectric nanogenerator provides good stability and high-output performance, which can easily light several commercial light-emitting diodes (LEDs) on a model ship by collecting the wave energy during the voyage. This new type of triboelectric nanogenerator based on the coating material has the advantages of simple process, low cost, and large-area preparation, which combines the performance of the coating itself with the power generation function, and have potential promising practical applications in ocean energy collection and utilization, self-powered sensing, and other fields.For decades, the V2VI3 compounds, specifically p-type Bi2-xSbxTe3 and n-type Bi2Te3-xSex, have remained the cornerstone of commercial thermoelectric solid-state cooling and power generation near room temperature. However, a long-standing problem in V2VI3 thermoelectrics is that n-type Bi2Te3-xSex is inferior in performance to p-type Bi2-xSbxTe3 near room temperature, restricting the device efficiency. In this work, we developed high-performance n-type Bi2-xSbxTe3, a composition long thought to only make good p-type thermoelectrics, to replace the mainstream n-type Bi2Te3-xSex. The success arises from the synergy of the following mechanisms (i) the donorlike effect, which produces excessive conduction electrons in Bi2Te3, is compensated by the antisite defects regulated by Sb alloying; (ii) the conduction band degeneracy increases from 2 for Bi2Te3 and Bi2Te3-xSex to 6 for Bi2-xSbxTe3, favoring high Seebeck coefficients; and (iii) the larger mass fluctuation yet smaller electronegativity difference and smaller atomic radius difference between Bi and Sb effectively suppresses the lattice thermal conductivity and retains decent carrier mobility.
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