Notes

Ecological impact on development of hemipterous bug (dysdercus koenigii) (hemiptera: pyrrhocoridae) along with boll rot ailment regarding natural cotton (gossypium hirsutum) developed in the varied area.
ALARA, short for keeping the likelihood of incurring exposure, the number of people exposed, and the magnitude of their individual doses "as low as reasonably achievable, taking into account economic and societal factors", is at the core of radiation protection. For many decades the principle has been area of continuous development, with recent work highlighting the importance of engaging with not only the decision makers in the ALARA process, but all stakeholders who may incur an exposure. The following paper looks at a particular case study where the dredging of non-hazardous sediment in the United Kingdom located near a now decommissioned nuclear power station raised substantial public concern of radiological exposures. This turned what is a straightforward construction activity into a complex public engagement and re-assurance task, at a significant cost disproportionate to the level of radiological risk. The paper highlights the key lessons learnt from the case study, including not only the importance of engaging the public as part of the ALARA process, but also considering the societal impact from stress and concerns if misinformation is allowed to promulgate. A discussion is included on the need to underpin any engagement with a clear plan including pre-engagement, implementation and re-enforcement of messages. In addition, the role of the radiation protection professional is considered in ensuring that all stakeholders are informed, so that ultimately, they can come to their own decision on what is safe.The key problem of statistical physics standing over one hundred years is how to exactly calculate the partition function (or free energy), which severely hinders the theory to be applied to predict the thermodynamic properties of condensed matters. Very recently, we developed a direct integral approach (DIA) to the solutions and achieved ultrahigh computational efficiency and precision. WRW4 In the present work, the background and the limitations of DIA were examined in details, and another method with the same efficiency was established to overcome the shortage of DIA for condensed system with lower density. The two methods were demonstrated with empirical potentials for solid and liquid cooper, solid argon and C60 molecules by comparing the derived internal energy or pressure with the results of vast molecular dynamics simulations, showing that the precision is about ten times higher than previous methods in a temperature range up to melting point. The ultrahigh efficiency enables the two methods to be performed with ab initio calculations and the experimental equation of state of solid copper up to ∼600 GPa was well reproduced, for the first time, from the partition function via density functional theory implemented.The n+-base width of a two-terminal vertical thyristor fabricated with n++(top-emitter)-p+(base)-n+(base)-p++(bottom-emitter) epitaxial Si layers was designed to produce a cross-point memory cell without a selector. Both the latch-up and latch-down voltages increased linearly with the n+-base width, but the voltage increase slope of the latch-up was 2.6 times higher than that of the latch-down, and the memory window increased linearly with the n+-base width. There was an optimal n+-base width that satisfied cross-point memory cell operation; i.e. ∼180 nm, determined by confirming that the memory window principally determined the condition of operation as a cross-point memory cell (i.e. one half of the latch-up voltage being less than the latch-down voltage and a sufficient voltage difference existing between the latch-up and latch-down voltages). The vertical thyristor designed with the optimal n+-base width produced write/erase endurance cycles of ∼109 by sustaining a memory margin (I on /I off ) of 102, and the cross-point memory cell array size of 1024 K sustained a sensing margin of 99 %, which is comparable with that of current dynamic random-access memory (DRAM). In addition, in the cross-point memory cell array, a ½ bias scheme (i.e. a memory array size of 1024 K for 0.02 W of power consumption) resulted in lower power consumption than a [Formula see text] bias scheme (i.e. a memory array size of 256 K for 0.02 W of power consumption).Using the finite-temperature determinant quantum Monte Carlo (DQMC) algorithm, we study the pairing symmetries of the Hubbard Hamiltonian with next-nearest-neighbor (NNN) hopping t' on square lattices. By varying the value of t', we find that the d-wave pairing is suppressed by the onset of t', while the p + ip-wave pairing tends to emerge for low electron density and t' around -0.7. Together with the calculation of the anti-ferromagnetic and ferromagnetic spin correlation function, we explore the relationship between anti-ferromagnetic order and the d-wave pairing symmetry, and the relationship between ferromagnetic order and the p + ip-wave pairing symmetry. Our results may be useful for the exploration of the mechanism of the electron pairing symmetries, and for the realization of the exotic p + ip-wave superconductivity.Sonodynamic therapy (SDT) is a promising non-invasive therapeutic modality with an extensive application prospect. Due to the engineerable nature of nanotechnology, nanosensitizers with predominant advantages of increased SDT efficacy and targeting specificity have attracted more and more research recently. In this review, we introduce the current investigations of nanosonosensitizers and focus on the potential strategies on nanoparticles-assisted sonosensitizers to enhance SDT efficacy. We extensively discuss the biomedical applications of ultrasound activated nanosonosensitizers in SDT and theranostics.Understanding the effect of surface to bulk coupling on topological surface states is important for harnessing the topological insulators for low dissipation electronics and quantum technologies. Here we investigate this effect on a low bulk carrier density Bi2Te3 single crystal using magnetoresistance, Hall resistivity, and Shubnikov-de Haas oscillations. Our results show the presence of high mobility surface bands and low mobility bulk bands. The surface states exhibit ambipolar transport without any gating. The mobility of surface states strongly depend on the nature of band bending, the upward band bending with holes as surface charge carrier exhibit large mobility while the downward band bending with electrons as surface charge carriers exhibit low surface mobility. The large mobility of surface Dirac holes is related to low surface defect density and small cyclotron mass. We also observe large magnetoresistance ∼285% due to multichannel quantum coherent transport in the bulk.
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