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Our approach is not limited to dipolar terms, but indeed, as demonstrated in the manuscript, can be applied to higher order terms as well. Using our model, one can scan the entire accessible parameter space of spheres for specific functionalities in systems made from spherical scatterers.Upconverted light from nanostructured metal surfaces can be produced by harmonic generation and multi-photon luminescence; however, these are very weak processes and require extremely high field intensities to produce a measurable signal. Here we report on bright emission, 5 orders of magnitude greater than harmonic generation, that can be seen from metal tunnel junctions that we believe is due to light-induced inelastic tunneling emission. Like inelastic tunneling light emission, which was recently reported to have 2% conversion efficiency per tunneling event, the emission wavelength recorded varies with the local electric field applied; however, here the field is from a 1560 nm femtosecond pulsed laser source. Finite-difference time-domain simulations of the experimental conditions show the local field is sufficient to generate tunneling-based inelastic light emission in the visible regime. This phenomenon is promising for producing ultrafast upconverted light emission with higher efficiency than conventional nonlinear processes.The effective manipulation of mode oscillation and competition is of fundamental importance for controlling light emission in semiconductor lasers. Here we develop a rate equation model which considers the spatially modulated gain and spontaneous emission, which are inherently governed by the ripple of the vacuum electromagnetic field in a Fabry-Pérot (FP) microcavity. By manipulating the interplay between the spatial oscillation of the vacuum field and external optical injection via dual-beam laser interference, single longitudinal mode operation is observed in a FP-type microcavity with a side mode suppression ratio exceeding 40 dB. An exploration of this extended rate equation model bridges the gap between the classical model of multimode competition in semiconductor lasers and a quantum-optics understanding of radiative processes in microcavities.Recent advancements in silicon photonics are enabling the development of chip-scale photonics devices for sensing and signal processing applications, among which on-chip spectrometers are of particular interest for precision wavelength monitoring and related applications. Most chip-scale spectrometers suffer from a resolution-bandwidth trade-off, thus limiting the uses of the device. Here we report on a novel passive, chip-scale, hybrid speckle-enhanced Fourier transform device that exhibits a two order-of-magnitude improvement in finesse (bandwidth/resolution) over the state-of-the art chip-scale speckle and Fourier transform spectrometers. In our proof-of-principle device, we demonstrate a spectral resolution of 140 MHz with 12-nm bandwidth for a finesse of 104 that can operate over a range of 1500-1600 nm. This chip-scale spectrometer structure implements a typical spatial heterodyne discrete Fourier transform interferometer network that is enhanced by speckle generated from the wafer substrate. This latter effect, which is extremely simple to invoke, superimposes the high wavelength resolution intrinsic to speckle generated from a strongly guiding waveguide with a more broadband but lower resolution discrete Fourier transform modality of the overarching waveguide structure. This hybrid approach signifies a new pathway for realizing chip-scale spectrometers capable of ultra-high resolution and broadband performance.We propose a simple and flexible fabrication approach based on the moiré effect of photoresist gratings for rapid synthesis of apodized structures with continuously varying depth. selleck kinase inhibitor Minor modifications in a standard laser interference lithography setup allow creating macroscopic, visible by naked eye moiré patterns that modulate the depth of subwavelength diffraction gratings. The spatial frequency of this modulation is easily controlled in a wide range, allowing to create a quasicrystal in extreme cases. Experimental results are confirmed by a theory with clear graphical solutions and numerical modeling. The method is universal and does not depend on a specific choice of photoresist and/or substrate materials, making it a promising choice for structured light applications, optical security elements or as a basic structuring method of complex optical devices.Metagrating is a new concept for wavefront manipulation that, unlike phase gradient metasurfaces, does not suffer from low efficiency and also has a less complicated fabrication process. In this paper, a compound metallic grating (a periodic metallic structure with more than one slit in each period) is proposed for anomalous reflection. We propose an analytical method for analyzing the electromagnetic response of this grating. Closed-form and analytical expressions are presented for the reflection coefficients of zeroth diffracted order and also higher diffracted orders. The proposed method is verified against full-wave simulations and the results are in excellent agreement. Thanks to the geometrical asymmetry of compound metallic grating, it can be used for designing anomalous reflection at the normal incidence. Given analytical expressions for reflection coefficients, we design a perfect anomalous reflector for a TM polarized plane wave via transferring all the incident power to ( - 1) diffraction order . The structure designed in this study has an unprecedented near-to-unitary efficiency of 99.9%. Finally, a multi-element compound metallic grating is proposed for reflecting the normal incidence to angles of below 30°, which is a challenging accomplishment. This excellent performance of compound metallic grating shows its high potential for microwave and terahertz wavefront manipulation applications.The light coupling properties of all-semiconductor plasmonic cavity integrated THz quantum well infrared photodetectors were studied for absorption enhancement of the quantum wells. The all-semiconductor plasmonic cavity is constructed by heavily doped GaAs with a plasmonic behavior in the THz regime. The plasmonic behavior of GaAs was thoroughly studied by taking into account the carrier density dependent effective mass of electrons. An optimal doping level for GaAs to be the most metallic is selected since the plasma frequency of the doped GaAs varies nonmonotonically with the carrier density. By tuning the absorption competition between the quantum wells and the doped GaAs meanwhile keeping the system at a critical coupling status, the absorptance of the quantum wells is prominently enhanced by 13.2 times compared to that in a standard device. The all-semiconductor plasmonic cavity integrated quantum well photodetectors can be polarization sensitive (polarization extinction ratio > 900) when the plasmonic cavity is shaped into an anisotropic form.
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