Notes

MANUFACTURING DESCRIPTION
Module Manufacturer: Micron Semiconductor (Xi’an) Co., Ltd.
Module Part Number: 18ASF1G72PZ-2G1A2
DRAM Manufacturer: Micron Technology
DRAM Components: D9RGV (MT40A1G4HX-093E:A)
Component Design ID: Z80A
DRAM Die Revision / Process Node: A / 30 nm
Register Manufacturer: Inphi Corporation
Register Model: IDDR4RCD-GS02
Module Manufacturing Date: Week 04, 2015
Manufacturing Date Decoded: January 19-23, 2015
Module Manufacturing Location: Xi'an, China (MXA)
Module Serial Number: 0E8B831Ch
Manufacturing Identification Number (Lot Number): DPAESY3009
Module PCB Revision: 2
PHYSICAL & LOGICAL ATTRIBUTES
Fundamental Memory Class: DDR4 SDRAM
Module Speed Grade: DDR4-2133P downbin
Base Module Type: RDIMM (133,35 mm)
Module Capacity: 8 GB
Reference Raw Card: C0 (8 layers)
JEDEC Raw Card Designer: SK hynix
Module Nominal Height: 31 < H <= 32 mm
Module Thickness Maximum, Front: 1 < T <= 2 mm
Module Thickness Maximum, Back: 1 < T <= 2 mm
Number of DIMM Ranks: 1
Address Mapping from Register to DRAM: Standard
DRAM Device Package: Standard Monolithic
DRAM Device Package Type: 78-ball FBGA
DRAM Device Die Count: Single die
Signal Loading: Not specified
DRAM I/O Width: 4 bits
Column Addressing: 10 bits
Row Addressing: 16 bits
Bank Addressing: 2 bits (4 banks)
Bank Group Addressing: 2 bits (4 groups)
Programmed DRAM Density: 4 Gb
Calculated DRAM Density: 4 Gb
Number of DRAM components: 18
DRAM Page Size: 512 B
Primary Memory Bus Width: 64 bits
Memory Bus Width Extension: 8 bits
Number of Rows of DRAMs on RDIMM: 1
Number of Registers on RDIMM: 1
Register Type: DDR4RCD01
DRAM Post Package Repair: Not supported
Soft Post Package Repair: Not supported
DRAM TIMING PARAMETERS
Fine Timebase: 0,001 ns
Medium Timebase: 0,125 ns
CAS Latencies Supported: 9T, 11T, 12T, 13T,
14T, 15T, 16T, 18T,
19T
Minimum Clock Cycle Time (tCK min): 0,938 ns (1066,10 MHz)
Maximum Clock Cycle Time (tCK max): 1,500 ns (666,67 MHz)
CAS# Latency Time (tAA min): 13,500 ns
RAS# to CAS# Delay Time (tRCD min): 13,500 ns
Row Precharge Delay Time (tRP min): 13,500 ns
Active to Precharge Delay Time (tRAS min): 33,000 ns
Act to Act/Refresh Delay Time (tRC min): 46,500 ns
Normal Refresh Recovery Delay Time (tRFC1 min): 260,000 ns
2x mode Refresh Recovery Delay Time (tRFC2 min): 160,000 ns
4x mode Refresh Recovery Delay Time (tRFC4 min): 110,000 ns
Short Row Active to Row Active Delay (tRRD_S min): 3,700 ns
Long Row Active to Row Active Delay (tRRD_L min): 5,300 ns
Long CAS to CAS Delay Time (tCCD_L min): 5,355 ns
Four Active Windows Delay (tFAW min): 15,000 ns
Maximum Active Window (tMAW): 8192*tREFI
Maximum Activate Count (MAC): Unlimited MAC
DRAM VDD 1,20 V operable/endurant: Yes/Yes
Supply Voltage (VDD), Min / Typical / Max: 1,16V / 1,20V / 1,26V
Activation Supply Voltage (VPP), Min / Typical / Max: 2,41V / 2,50V / 2,75V
Termination Voltage (VTT), Min / Typical / Max: 0,565V / 0,605V / 0,640V
THERMAL PARAMETERS
Module Thermal Sensor: Incorporated
Thermal Heat Spreader: Not Incorporated
SPD PROTOCOL
SPD Revision: 1.0
SPD Bytes Total: 512
SPD Bytes Used: 384
SPD Checksum (Bytes 00h-7Dh): 8E10h (OK)
SPD Checksum (Bytes 80h-FDh): 2668h (OK)
PART NUMBER DETAILS
JEDEC DIMM Label: 8GB 1Rx4 PC4-2133P-RC0-10
Classification: DDR4 SDRAM
Module Type: 288-pin RDIMM
Module Speed: DDR4-2133 15-15-15
Die Revision: A
PCB Revision: 2
Package Type: FBGA w/TS
Frequency CAS RCD RP RAS RC RRDS RRDL CCDL FAW
1067 MHz 19 15 15 36 50 4 6 6 16
1067 MHz 18 15 15 36 50 4 6 6 16
1067 MHz 16 15 15 36 50 4 6 6 16
1067 MHz 15 15 15 36 50 4 6 6 16
933 MHz 14 13 13 31 44 4 5 5 14
933 MHz 13 13 13 31 44 4 5 5 14
800 MHz 12 11 11 27 38 3 5 5 12
800 MHz 11 11 11 27 38 3 5 5 12
667 MHz 9 9 9 22 31 3 4 4 10