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<p class="p__0">1 V throughout the emitter junction will ordinarily be appropriate to cut off either a germanium or silicon transistor ... The specific technique to be utilized in establishing an operating point on the transistor qualities depends on whether the transistor is to operate in the active, saturation or cutoff regions; on the application under factor to consider; on the thermal stability of the circuit; and on other aspects ... In This Site fixed-bias circuit, the operating point for the circuit of illus ... a can be developed by keeping in mind that the required existing I is constant, independent of the quiescent collector existing I, which is why this circuit is called the fixed-bias circuit ...</p>
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<p class="p__1">The smaller the worth of S, the less likely the circuit will show thermal runaway ... S, as defined here, can not be smaller sized than unity ... Other stability aspects are defined in regards to dc existing gain h as I/h, and in regards to base-to-emitter voltage as I/V ... However, bias circuits with little values of S will likewise perform sufficiently for transistors that have big variations of h and V. For the fixed-bias circuit it can be shown that S = h + 1, and if h = 50, then S = 51 ... Such a big value of S makes thermal runaway a certain possibility with this circuit ...</p>
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<p class="p__2">a is gone back to the collector junction rather than to the battery terminal ... Such a connection is shown in illus ... b. In this bias circuit, if I tends to increase (either due to the fact that of a rise in temperature level or because the transistor has actually been replaced by another), then V decreases ... Hence I also decreases and, as a consequence of this decreased predisposition existing, the collector current is not enabled to increase as much as it would if fixed predisposition were utilized ... The stability aspect S is (1) displayed in Eq ... (1 )... This worth is smaller than h + 1, which is the worth acquired for the fixed-bias case ...</p>
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